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1 high-resistivity region
високоомна областьEnglish-Ukrainian dictionary of microelectronics > high-resistivity region
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2 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region
См. также в других словарях:
high-resistivity region — didžiavaržė sritis statusas T sritis radioelektronika atitikmenys: angl. high resistivity region vok. hochohmiger Bereich, m rus. высокоомная область, f pranc. région à haute résistance, f … Radioelektronikos terminų žodynas
région à haute résistance — didžiavaržė sritis statusas T sritis radioelektronika atitikmenys: angl. high resistivity region vok. hochohmiger Bereich, m rus. высокоомная область, f pranc. région à haute résistance, f … Radioelektronikos terminų žodynas
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
didžiavaržė sritis — statusas T sritis radioelektronika atitikmenys: angl. high resistivity region vok. hochohmiger Bereich, m rus. высокоомная область, f pranc. région à haute résistance, f … Radioelektronikos terminų žodynas
hochohmiger Bereich — didžiavaržė sritis statusas T sritis radioelektronika atitikmenys: angl. high resistivity region vok. hochohmiger Bereich, m rus. высокоомная область, f pranc. région à haute résistance, f … Radioelektronikos terminų žodynas
высокоомная область — didžiavaržė sritis statusas T sritis radioelektronika atitikmenys: angl. high resistivity region vok. hochohmiger Bereich, m rus. высокоомная область, f pranc. région à haute résistance, f … Radioelektronikos terminų žodynas
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Crystal — /kris tl/, n. 1. a city in SE Minnesota, near Minneapolis. 25,543. 2. a female given name. * * * I Any solid material whose atoms are arranged in a definite pattern and whose surface regularity reflects its internal symmetry. Each of a crystal s… … Universalium
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
IMPATT diode — An IMPATT diode (IMPact ionization Avalanche Transit Time) is a form of high power diode used in high frequency electronics and microwave devices. They are typically made with silicon carbide owing to their high breakdown fields.They operate at… … Wikipedia
